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| SMD Type High Gain Amplifier Transistor 2SD2153 SOT-89 Transistors Unit: mm +0.1 1.50-0.1 Features Low saturation voltage. Excellent DC current gain characteristics. +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 0.40 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 25 6 2 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50iA IC=1mA IE=50iA VCB=20V VEB=5V 0.12 560 110 22 Testconditons Min 30 25 6 0.5 0.5 0.5 2700 MHz pF Typ Max Unit V V V iA iA V VCE(sat) IC=1A, IB=20mA hFE fT Cob VCE=6V, IC=0.5A VCE=10V, IE= -10mA, f=100MHz VCB=10V, IE=0A, f=1MHz hFE Classification Marking Rank hFE U 560 1200 DN V 820 1800 W 1200 2700 +0.1 -0.1 www.kexin.com.cn 1 |
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